PART |
Description |
Maker |
BLM7G1822S-40PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
PTGA090304MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W, 48 V, 575 ?960 MHz
|
Cree, Inc
|
Q68000-A6887 CGY31 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
Q68000-A8884 CGY92 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier) From old datasheet system
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦,28V的,1 GHz的LDMOS的场效应 30 Watt / 28V / 1 Ghz LDMOS FET 30 WATT 28V 1 GHz LDMOS FET 30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|